摘要
We report on red phosphorescent trilayer organic light-emitting field-effect transistors (LEFETs), which exhibit ambipolar transport characteristics but strong emission in the unipolar hole regime, with an exceptionally wide recombination zone of 60-70μm and a maximum external quantum efficiency of 0.21%. From the results of detailed electroluminescence characterization, we clarify how the energy-level matching condition and transport geometry of the heterostructure govern the charge distribution and recombination, and affect the overall device performance.
原文 | ???core.languages.en_GB??? |
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文章編號 | 020304 |
期刊 | Japanese Journal of Applied Physics |
卷 | 55 |
發行號 | 2 |
DOIs | |
出版狀態 | 已出版 - 2月 2016 |