Raman and photoluminescence analyses of the crystalline InAlAs layer grown on InP substrate

G. C. Jiang, Y. D. Juang, J. J. Chyi, S. Lu, L. B. Chang

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

Photoluminescence and Raman measurements are used to characterize the InxAl1‐xAs (0.48 < × <0.573)epilayers grown on InP substrate by molecular beam epitaxy. It is found that as In composition, x, deviates too much from 0.52, misfit dislocations may be introduced. These dislocations will dramatically reduce the radiative efficiency of the InAlAs epilayers. Raman spectra become broader and more asymmetry due to alloy potential fluctuations as the mismatch becomes large.

原文???core.languages.en_GB???
頁(從 - 到)275-280
頁數6
期刊Crystal Research and Technology
30
發行號2
DOIs
出版狀態已出版 - 1995

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