Raised source/drain (Rsd) and vertical lightly doped drain (LDD) poly-Si thin-film transistor

Feng Tso Chien, Jing Ye, Wei Cheng Yen, Chii Wen Chen, Cheng Li Lin, Yao Tsung Tsai

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a raised source/drain area that can disperse the drain electric field. In this study, we will discuss how the electric field at the drain side of an RSD device is reduced by a vertical lightly doped drain (LDD) scheme rather than a RSD structure. We used different raised source/drain forms to simulate the drain side electric field for each device, as well as their output characteristics, using Integrated Systems Engineering (ISE-TCAD) simulators. Different source and drain thicknesses and doping profiles were applied to verify the RSD mechanism. We found that the electric fields of a traditional device and uniform doping RSD structures are almost the same (~2.9 × 105 V/cm). The maximum drain electric field could be reduced to ~2 × 105 V/cm if a vertical lightly doped drain RSD scheme was adopted. A pure raised source/drain structure did not benefit the device characteristics if a vertical lightly doped drain design was not included in the raised source/drain areas.

原文???core.languages.en_GB???
文章編號103
頁(從 - 到)1-11
頁數11
期刊Membranes
11
發行號2
DOIs
出版狀態已出版 - 2月 2021

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