Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm

Po Tsung Tu, Indraneel Sanyal, Po Chun Yeh, Heng Yuan Lee, Li Heng Lee, Chih I. Wu, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.

原文???core.languages.en_GB???
主出版物標題2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面130-131
頁數2
ISBN(電子)9781728142326
DOIs
出版狀態已出版 - 8月 2020
事件2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
持續時間: 10 8月 202013 8月 2020

出版系列

名字2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

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???event.eventtypes.event.conference???2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
國家/地區Taiwan
城市Hsinchu
期間10/08/2013/08/20

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