Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm

Po Tsung Tu; Indraneel Sanyal; Po Chun Yeh; Heng Yuan Lee; Li Heng Lee; Chih I. Wu; Jen Inn Chyi

doi:10.1109/VLSI-TSA48913.2020.9203728

Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm

Po Tsung Tu, Indraneel Sanyal, Po Chun Yeh, Heng Yuan Lee, Li Heng Lee, Chih I. Wu, Jen Inn Chyi

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.

原文	???core.languages.en_GB???
主出版物標題	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	130-131
頁數	2
ISBN（電子）	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203728
出版狀態	已出版 - 8月 2020
事件	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan 持續時間: 10 8月 2020 → 13 8月 2020

出版系列

名字	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
國家/地區	Taiwan
城市	Hsinchu
期間	10/08/20 → 13/08/20

存取文件

10.1109/VLSI-TSA48913.2020.9203728

引用此

Tu, P. T., Sanyal, I., Yeh, P. C., Lee, H. Y., Lee, L. H., Wu, C. I., & Chyi, J. I. (2020). Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. 於 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 (頁 130-131). 文章 9203728 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA48913.2020.9203728

Tu, Po Tsung ; Sanyal, Indraneel ; Yeh, Po Chun 等. / Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 頁 130-131 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

@inproceedings{9eff7a850e1a487694fc12a10084bdaa,

title = "Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm",

abstract = "Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.",

author = "Tu, {Po Tsung} and Indraneel Sanyal and Yeh, {Po Chun} and Lee, {Heng Yuan} and Lee, {Li Heng} and Wu, {Chih I.} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",

year = "2020",

month = aug,

doi = "10.1109/VLSI-TSA48913.2020.9203728",

language = "???core.languages.en_GB???",

series = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "130--131",

booktitle = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

}

Tu, PT, Sanyal, I, Yeh, PC, Lee, HY, Lee, LH, Wu, CI & Chyi, JI 2020, Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. 於 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020., 9203728, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Institute of Electrical and Electronics Engineers Inc., 頁 130-131, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Hsinchu, Taiwan, 10/08/20. https://doi.org/10.1109/VLSI-TSA48913.2020.9203728

Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. / Tu, Po Tsung; Sanyal, Indraneel; Yeh, Po Chun 等.
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 130-131 9203728 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm

AU - Tu, Po Tsung

AU - Sanyal, Indraneel

AU - Yeh, Po Chun

AU - Lee, Heng Yuan

AU - Lee, Li Heng

AU - Wu, Chih I.

AU - Chyi, Jen Inn

PY - 2020/8

Y1 - 2020/8

N2 - Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.

AB - Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.

UR - http://www.scopus.com/inward/record.url?scp=85093697896&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA48913.2020.9203728

DO - 10.1109/VLSI-TSA48913.2020.9203728

M3 - 會議論文篇章

AN - SCOPUS:85093697896

T3 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

SP - 130

EP - 131

BT - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Y2 - 10 August 2020 through 13 August 2020

ER -

Tu PT, Sanyal I, Yeh PC, Lee HY, Lee LH, Wu CI 等. Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm. 於 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 130-131. 9203728. (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). doi: 10.1109/VLSI-TSA48913.2020.9203728

Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm

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引用此

Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_gProduct of 13.9 GHz-μm