Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

N. Ledentsov; M. Agustin; V. A. Shchukin; J. R. Kropp; N. N. Ledentsov; Chorchos; J. P. Turkiewicz; Z. Khan; C. L. Cheng; J. W. Shi; N. Cherkashin

doi:10.1016/j.sse.2019.03.018

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

N. Ledentsov
, M. Agustin
, V. A. Shchukin
, J. R. Kropp
, N. N. Ledentsov
, Chorchos
, J. P. Turkiewicz
, Z. Khan
, C. L. Cheng
, J. W. Shi
, N. Cherkashin

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

23 引文斯高帕斯（Scopus）

原文	???core.languages.en_GB???
頁（從 - 到）	150-158
頁數	9
期刊	Solid-State Electronics
卷	155
DOIs	https://doi.org/10.1016/j.sse.2019.03.018
出版狀態	已出版 - 5月 2019

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10.1016/j.sse.2019.03.018

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Ledentsov, N., Agustin, M., Shchukin, V. A., Kropp, J. R., Ledentsov, N. N., Chorchos, Turkiewicz, J. P., Khan, Z., Cheng, C. L., Shi, J. W., & Cherkashin, N. (2019). Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C. Solid-State Electronics, 155, 150-158. https://doi.org/10.1016/j.sse.2019.03.018

@article{24bc9114827e462baf817f027dda35dc,

title = "Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C",

author = "N. Ledentsov and M. Agustin and Shchukin, \{V. A.\} and Kropp, \{J. R.\} and Ledentsov, \{N. N.\} and Chorchos and Turkiewicz, \{J. P.\} and Z. Khan and Cheng, \{C. L.\} and Shi, \{J. W.\} and N. Cherkashin",

note = "Funding Information: This work has been partly supported by the French National Research Agency under the “Investissement d'Avenir” program reference No. ANR-10-EQPX-38-01. NC acknowledge the “Conseil Regional Midi-Pyr{\'e}n{\'e}es” and the European FEDER for financial support within the CPER program. Funding Information: The work on high-speed single-mode VCSELs for 4-PAM operation has received funding from the Federal Ministry of Education and Research ( BMBF ) as part of “Twenty20 – Partnership for Innovation” initiative in the project “fast-bits”. ",

year = "2019",

month = may,

doi = "10.1016/j.sse.2019.03.018",

language = "???core.languages.en\_GB???",

volume = "155",

pages = "150--158",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

AU - Ledentsov, N.

AU - Agustin, M.

AU - Shchukin, V. A.

AU - Kropp, J. R.

AU - Ledentsov, N. N.

AU - Chorchos,

AU - Turkiewicz, J. P.

AU - Khan, Z.

AU - Cheng, C. L.

AU - Shi, J. W.

AU - Cherkashin, N.

N1 - Funding Information: This work has been partly supported by the French National Research Agency under the “Investissement d'Avenir” program reference No. ANR-10-EQPX-38-01. NC acknowledge the “Conseil Regional Midi-Pyrénées” and the European FEDER for financial support within the CPER program. Funding Information: The work on high-speed single-mode VCSELs for 4-PAM operation has received funding from the Federal Ministry of Education and Research ( BMBF ) as part of “Twenty20 – Partnership for Innovation” initiative in the project “fast-bits”.

PY - 2019/5

Y1 - 2019/5

UR - https://www.scopus.com/pages/publications/85063930974

U2 - 10.1016/j.sse.2019.03.018

DO - 10.1016/j.sse.2019.03.018

M3 - 期刊論文

AN - SCOPUS:85063930974

SN - 0038-1101

VL - 155

SP - 150

EP - 158

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

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Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C