We present a quantitative analysis of electron energy loss (EEL) spectra to investigate the initial growth of C60 thin films on a graphite substrate at room temperature. The approach is to fit the experimental data to a parameterized simulation, which includes both a growth model and the treatment of electron scattering. A rate equation approach is used to characterize the growth by a single parameter, the probability of a molecule descending to the preceding layer when approaching an island edge. The scattering dynamics is described by a layer-dependent cross section and a constant mean free path. The results indicate that the initial growth of C60 thin films on graphite is predominantly two-dimensional with a high degree of interlayer transport. Specifically, the simulation gives a probability of 0.88 ± 0.10 for a C60 molecule to cross an overlayer descending step.
|頁（從 - 到）||590-594|
|出版狀態||已出版 - 2 8月 1999|
|事件||Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) - Birmingham, UK|
持續時間: 31 8月 1998 → 4 9月 1998