摘要
The absorption coefficient at 1.4eV is divided by the value at 0.9eV to obtain the factor used to judge the quality of μc-Si:H. PV device performance can be predicted by multiplying Voc with Iscwhen using this layer as an intrinsic layer. The results show a good relationship between the quality factor and the product of open-circuit voltage and short-circuit current. However, the final efficiency is influenced by the identities of the interface in the multilayer structure.
原文 | ???core.languages.en_GB??? |
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文章編號 | 653501 |
期刊 | International Journal of Photoenergy |
卷 | 2012 |
DOIs | |
出版狀態 | 已出版 - 2012 |