Pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence properties

Huai Chung Chen, Chun Wen Wang, Sheng Wei Lee, Lih Juann Chen

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.

原文???core.languages.en_GB???
頁(從 - 到)367-370
頁數4
期刊Advanced Materials
18
發行號3
DOIs
出版狀態已出版 - 3 2月 2006

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