Pseudomorphic AlInP/InP hetero junction bipolar transistors

Y. M. Hsin; M. C. Ho; X. B. Mei; H. H. Liao; T. P. Chin; C. W. Tu; P. M. Asbeck

doi:10.1049/el:19950084

Pseudomorphic AlInP/InP hetero junction bipolar transistors

Y. M. Hsin, M. C. Ho, X. B. Mei, H. H. Liao, T. P. Chin, C. W. Tu, P. M. Asbeck

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Novel InP-based heterojunction bipolar transistors (HBTs) using an AlW pseudomorphic emitter, together with an InP base and collector, have been fabricated. By using InP as both base and collector, the advantages of high electron velocity and high breakdown field of InP collectors are obtained without the problem associated with the energy barrier between the more standard InGaAsAnP base and collector heterojunction. Epitaxial layers were grown by gas-source molecular beam epitaxy (GSMBE). The 200Å pseudomorphic emitter had an aluminium fraction of 15%, sufficiently suppressing hole injection from the base. The DC gain for 40×40 μm² devices reached 18. The epibreakdown voltage BV_CEO of 10V is an improvement over devices with InGaAs base and collector layers.

原文	???core.languages.en_GB???
頁（從 - 到）	141-142
頁數	2
期刊	Electronics Letters
卷	31
發行號	2
DOIs	https://doi.org/10.1049/el:19950084
出版狀態	已出版 - 19 1月 1995

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10.1049/el:19950084

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title = "Pseudomorphic AlInP/InP hetero junction bipolar transistors",

abstract = "Novel InP-based heterojunction bipolar transistors (HBTs) using an AlW pseudomorphic emitter, together with an InP base and collector, have been fabricated. By using InP as both base and collector, the advantages of high electron velocity and high breakdown field of InP collectors are obtained without the problem associated with the energy barrier between the more standard InGaAsAnP base and collector heterojunction. Epitaxial layers were grown by gas-source molecular beam epitaxy (GSMBE). The 200{\AA} pseudomorphic emitter had an aluminium fraction of 15%, sufficiently suppressing hole injection from the base. The DC gain for 40×40 μm2 devices reached 18. The epibreakdown voltage BVCEO of 10V is an improvement over devices with InGaAs base and collector layers.",

author = "Hsin, {Y. M.} and Ho, {M. C.} and Mei, {X. B.} and Liao, {H. H.} and Chin, {T. P.} and Tu, {C. W.} and Asbeck, {P. M.}",

year = "1995",

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day = "19",

doi = "10.1049/el:19950084",

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T1 - Pseudomorphic AlInP/InP hetero junction bipolar transistors

AU - Hsin, Y. M.

AU - Ho, M. C.

AU - Mei, X. B.

AU - Liao, H. H.

AU - Chin, T. P.

AU - Tu, C. W.

AU - Asbeck, P. M.

PY - 1995/1/19

Y1 - 1995/1/19

N2 - Novel InP-based heterojunction bipolar transistors (HBTs) using an AlW pseudomorphic emitter, together with an InP base and collector, have been fabricated. By using InP as both base and collector, the advantages of high electron velocity and high breakdown field of InP collectors are obtained without the problem associated with the energy barrier between the more standard InGaAsAnP base and collector heterojunction. Epitaxial layers were grown by gas-source molecular beam epitaxy (GSMBE). The 200Å pseudomorphic emitter had an aluminium fraction of 15%, sufficiently suppressing hole injection from the base. The DC gain for 40×40 μm2 devices reached 18. The epibreakdown voltage BVCEO of 10V is an improvement over devices with InGaAs base and collector layers.

AB - Novel InP-based heterojunction bipolar transistors (HBTs) using an AlW pseudomorphic emitter, together with an InP base and collector, have been fabricated. By using InP as both base and collector, the advantages of high electron velocity and high breakdown field of InP collectors are obtained without the problem associated with the energy barrier between the more standard InGaAsAnP base and collector heterojunction. Epitaxial layers were grown by gas-source molecular beam epitaxy (GSMBE). The 200Å pseudomorphic emitter had an aluminium fraction of 15%, sufficiently suppressing hole injection from the base. The DC gain for 40×40 μm2 devices reached 18. The epibreakdown voltage BVCEO of 10V is an improvement over devices with InGaAs base and collector layers.

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U2 - 10.1049/el:19950084

DO - 10.1049/el:19950084

M3 - 期刊論文

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SN - 0013-5194

VL - 31

SP - 141

EP - 142

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Pseudomorphic AlInP/InP hetero junction bipolar transistors

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