Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo; H. Y. Kim; J. Kim; Shu Han Chen; Sheng Yu Wang; Jen Inn Chyi; B. Y. Chou; K. H. Chen; Y. L. Wang; C. Y. Chang; S. J. Pearton; L. I. Kravchenko; S. Jang; F. Ren

doi:10.1116/1.3246405

Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo, H. Y. Kim, J. Kim, Shu Han Chen, Sheng Yu Wang, Jen Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, F. Ren

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

In_0.52Al_0.48As/In_0.39 Ga _0.61As_0.77Sb_0.23/In_0.53 Ga _0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 10¹¹ to 2× 10¹⁵ protons/cm². The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 10¹¹ cm^-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

原文	???core.languages.en_GB???
頁（從 - 到）	L33-L37
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	27
發行號	6
DOIs	https://doi.org/10.1116/1.3246405
出版狀態	已出版 - 2009

存取文件

10.1116/1.3246405

引用此

Lo, C. F., Kim, H. Y., Kim, J., Chen, S. H., Wang, S. Y., Chyi, J. I., Chou, B. Y., Chen, K. H., Wang, Y. L., Chang, C. Y., Pearton, S. J., Kravchenko, L. I., Jang, S., & Ren, F. (2009). Proton irradiation effects on Sb-based heterojunction bipolar transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), L33-L37. https://doi.org/10.1116/1.3246405

@article{6696f7321ff54c508daf90272a747fba,

title = "Proton irradiation effects on Sb-based heterojunction bipolar transistors",

abstract = "In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.",

author = "Lo, {C. F.} and Kim, {H. Y.} and J. Kim and Chen, {Shu Han} and Wang, {Sheng Yu} and Chyi, {Jen Inn} and Chou, {B. Y.} and Chen, {K. H.} and Wang, {Y. L.} and Chang, {C. Y.} and Pearton, {S. J.} and Kravchenko, {L. I.} and S. Jang and F. Ren",

note = "Funding Information: The work at Oak Ridge National Laboratory was supported by the Center for Nanophase Materials Sciences, sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. ",

year = "2009",

doi = "10.1116/1.3246405",

language = "???core.languages.en_GB???",

volume = "27",

pages = "L33--L37",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "6",

}

Lo, CF, Kim, HY, Kim, J, Chen, SH, Wang, SY, Chyi, JI, Chou, BY, Chen, KH, Wang, YL, Chang, CY, Pearton, SJ, Kravchenko, LI, Jang, S & Ren, F 2009, 'Proton irradiation effects on Sb-based heterojunction bipolar transistors', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 卷 27, 編號 6, 頁 L33-L37. https://doi.org/10.1116/1.3246405

TY - JOUR

T1 - Proton irradiation effects on Sb-based heterojunction bipolar transistors

AU - Lo, C. F.

AU - Kim, H. Y.

AU - Kim, J.

AU - Chen, Shu Han

AU - Wang, Sheng Yu

AU - Chyi, Jen Inn

AU - Chou, B. Y.

AU - Chen, K. H.

AU - Wang, Y. L.

AU - Chang, C. Y.

AU - Pearton, S. J.

AU - Kravchenko, L. I.

AU - Jang, S.

AU - Ren, F.

N1 - Funding Information: The work at Oak Ridge National Laboratory was supported by the Center for Nanophase Materials Sciences, sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.

PY - 2009

Y1 - 2009

N2 - In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

AB - In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

UR - http://www.scopus.com/inward/record.url?scp=72849115682&partnerID=8YFLogxK

U2 - 10.1116/1.3246405

DO - 10.1116/1.3246405

M3 - 期刊論文

AN - SCOPUS:72849115682

SN - 1071-1023

VL - 27

SP - L33-L37

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Proton irradiation effects on Sb-based heterojunction bipolar transistors

摘要

存取文件

指紋

引用此