Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay

研究成果: 雜誌貢獻期刊論文同行評審

61 引文 斯高帕斯(Scopus)

摘要

Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

原文???core.languages.en_GB???
頁(從 - 到)1453-1456
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
18
發行號3
DOIs
出版狀態已出版 - 5月 2000

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