Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

M. Hong; K. A. Anselm; J. Kwo; H. M. Ng; J. N. Baillargeon; A. R. Kortan; J. P. Mannaerts; A. Y. Cho; C. M. Lee; J. I. Chyi; T. S. Lay

doi:10.1116/1.591402

Properties of Ga₂O₃(Gd₂O₃)/GaN metal-insulator-semiconductor diodes

M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay

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63 引文斯高帕斯（Scopus）

摘要

Ga₂O₃(Gd₂O₃)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga₂O₃(Gd₂O₃) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

原文	???core.languages.en_GB???
頁（從 - 到）	1453-1456
頁數	4
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	18
發行號	3
DOIs	https://doi.org/10.1116/1.591402
出版狀態	已出版 - 5月 2000

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10.1116/1.591402

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abstract = "Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.",

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T1 - Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

AU - Hong, M.

AU - Anselm, K. A.

AU - Kwo, J.

AU - Ng, H. M.

AU - Baillargeon, J. N.

AU - Kortan, A. R.

AU - Mannaerts, J. P.

AU - Cho, A. Y.

AU - Lee, C. M.

AU - Chyi, J. I.

AU - Lay, T. S.

PY - 2000/5

Y1 - 2000/5

N2 - Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

AB - Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

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SN - 1071-1023

VL - 18

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

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Properties of Ga₂O₃(Gd₂O₃)/GaN metal-insulator-semiconductor diodes