Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.
|頁（從 - 到）||1453-1456|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||已出版 - 5月 2000|