Properties and effects of hydrogen in GaN

S. J. Pearton, H. Cho, F. Ren, J. I. Chyi, J. Han, R. G. Wilson

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H 2 formation probability.

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期刊MRS Internet Journal of Nitride Semiconductor Research
5
發行號SUPPL. 1
DOIs
出版狀態已出版 - 2000

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