@inproceedings{ae4b5c8dbd4c4a918d547e9f0089cad9,
title = "Progress on InAs-based quantum dot light emitters",
abstract = "We report on the growth and fabrication of (InGa)As quantum dot classical and quantum light emitters, i.e. edge-emitting laser diodes and single photon sources, respectively. With an InAlAs/InGaAs composite overgrown layer, InAs quantum dots exhibit high optical quality and large state-separation that are desirable for laser diodes with high characteristic temperature. Single photon source has been realized by optical pumping a single quantum dot through a submicron aperture fabricated on a low-density self-assembled InGaAs quantum dots ensemble.",
author = "Chyi, {Jen Inn} and Liu, {Wei Sheng} and Hsieh, {Tung Po} and Hsu, {Tzu Min} and Chang, {Wen Hao} and Chen, {Wen Yen} and Chang, {Hsiang Szu}",
year = "2006",
language = "???core.languages.en_GB???",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "1--6",
booktitle = "State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI",
edition = "2",
note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",
}