Processing and device performance of GaN power rectifiers

A. P. Zhang, G. T. Dang, X. A. Cao, H. Cho, F. Ren, J. Han, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, S. N.G. Chu, R. G. Wilson, S. J. Pearton

研究成果: 雜誌貢獻會議論文同行評審


Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω·cm-2.

頁(從 - 到)W11.67.1 - W11.67.6
期刊Materials Research Society Symposium - Proceedings
出版狀態已出版 - 2000
事件The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
持續時間: 28 11月 19993 12月 1999


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