@article{d49c372b227a432fb45954d40597b959,
title = "Processing and device performance of GaN power rectifiers",
abstract = "Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω·cm-2.",
author = "Zhang, {A. P.} and Dang, {G. T.} and Cao, {X. A.} and H. Cho and F. Ren and J. Han and Chyi, {J. I.} and Lee, {C. M.} and Nee, {T. E.} and Chuo, {C. C.} and Chi, {G. C.} and Chu, {S. N.G.} and Wilson, {R. G.} and Pearton, {S. J.}",
note = "Funding Information: The work at UF is partially supported by an NSF grant (DMR-9732865, L. Hess) and by a DARPA/EPRI grant (D. Radack/J. Melcher), no. MDA 972-98-1-0006 monitored by ONR (J. C. Zolper). The work at NCU is sponsored by the National Science Council of R.O.C. under contract no. NSC-88-2215-E-008-012. The work of RGW is partially supported by a grant for ARO (J.M. Zavada). Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the US Department of Energy under grant DEAC04-94AL85000.; The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",
year = "2000",
language = "???core.languages.en_GB???",
volume = "595",
pages = "W11.67.1 -- W11.67.6",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
}