Processing and characterization of LiNbO3 thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

Xuguang Wang; Jie Zhu; Hongzhou Zhang; Tai Chou Lee; Trinh Vo; Thomas A. Rabson; Marc A. Robert

doi:10.1080/10584580108010840

Processing and characterization of LiNbO₃ thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

Xuguang Wang, Jie Zhu, Hongzhou Zhang, Tai Chou Lee, Trinh Vo, Thomas A. Rabson, Marc A. Robert

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.

原文	???core.languages.en_GB???
頁（從 - 到）	171-180
頁數	10
期刊	Integrated Ferroelectrics
卷	40
發行號	1-5
DOIs	https://doi.org/10.1080/10584580108010840
出版狀態	已出版 - 2001
事件	13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States 持續時間: 11 3月 2006 → 14 3月 2006

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10.1080/10584580108010840

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abstract = "LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.",

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author = "Xuguang Wang and Jie Zhu and Hongzhou Zhang and Lee, {Tai Chou} and Trinh Vo and Rabson, {Thomas A.} and Robert, {Marc A.}",

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T1 - Processing and characterization of LiNbO3 thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

AU - Wang, Xuguang

AU - Zhu, Jie

AU - Zhang, Hongzhou

AU - Lee, Tai Chou

AU - Vo, Trinh

AU - Rabson, Thomas A.

AU - Robert, Marc A.

PY - 2001

Y1 - 2001

N2 - LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.

AB - LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.

KW - C-V

KW - LiNbO

KW - MFSFET

KW - P-V

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SN - 1058-4587

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JF - Integrated Ferroelectrics

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T2 - 13th International Symposium on Integrated Ferroelectrics

Y2 - 11 March 2006 through 14 March 2006

ER -

Processing and characterization of LiNbO3 thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

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Processing and characterization of LiNbO₃ thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application