Principles and applications of Ig-RTN in Nano-scaled MOSFET

Principles and applications of I_g-RTN in Nano-scaled MOSFET

Steve S. Chung, E. R. Hsieh

研究成果: 書貢獻/報告類型 › 篇章 › 同行評審

2 引文斯高帕斯（Scopus）

原文	???core.languages.en_GB???
主出版物標題	Noise in Nanoscale Semiconductor Devices
發行者	Springer International Publishing
頁面	175-200
頁數	26
ISBN（電子）	9783030375003
ISBN（列印）	9783030374990
DOIs	https://doi.org/10.1007/978-3-030-37500-3_5
出版狀態	已出版 - 26 4月 2020

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