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Preparation of GaSb surface for low interfacial trap density MOS capacitors
Cheng Yu Chen
, Wei Jen Hsueh
, Chao Min Chang
, Hsien Ming Hsu
,
Jen Inn Chyi
前瞻科技研究中心
電機工程學系
光電科學研究中心
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Keyphrases
Aluminum Oxide
14%
Band Gap
14%
Capacitance-voltage
14%
Complementary MOS
14%
Conductance Method
14%
Dielectric Deposition
28%
Electrical Properties
14%
Fermi Level
14%
GaSb
100%
Gate Leakage Current
14%
HfO2
14%
High-k Dielectric
14%
Hydrogen Plasma
14%
In Situ
14%
In Situ Techniques
28%
Interfacial Trap Density
100%
Metal-oxide-semiconductor Capacitor (MOSCAP)
42%
MOS Capacitor
100%
MOS Integrated Circuits
14%
MOSFET
14%
Native Oxide
14%
Oxide-free
14%
P-channel
14%
Room Temperature
14%
Surface Treatment
14%
Valence
14%
Valence Band
14%
Material Science
Aluminum Oxide
25%
Capacitance
25%
Capacitor
100%
Density
100%
Dielectric Material
50%
Electronic Circuit
25%
Metal Oxide
75%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Oxide Compound
25%
Oxide Semiconductor
75%
Surface (Surface Science)
100%
Surface Treatment
25%
Physics
Capacitance-Voltage Characteristics
33%
Dielectric Material
66%
Electrical Property
33%
Field Effect Transistor
33%
Hydrogen Plasma
33%
Integrated Circuit
33%
Metal Oxide Semiconductor
100%
Room Temperature
33%
Engineering
Band Gap
33%
Dielectrics
66%
Fermi Level
33%
Integrated Circuit
33%
Metal Oxide Semiconductor
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Room Temperature
33%
Valence Band
33%