Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

Kong Wei Cheng; Chao Ming Huang; Guan Ting Pan; Wen Sheng Chang; Tai Chou Lee; Thomas C.K. Yang

doi:10.1016/j.physb.2008.12.011

Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn₅S₈ film electrodes

Kong Wei Cheng, Chao Ming Huang, Guan Ting Pan, Wen Sheng Chang, Tai Chou Lee, Thomas C.K. Yang

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Chemically synthesized Sb-doped p-type AgIn₅S₈ films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn₅S₈ phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×10¹⁴-8.82×10¹⁴ cm^-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm² under illumination using a 300 W Xe lamp system. Crown

原文	???core.languages.en_GB???
頁（從 - 到）	1264-1270
頁數	7
期刊	Physica B: Condensed Matter
卷	404
發行號	8-11
DOIs	https://doi.org/10.1016/j.physb.2008.12.011
出版狀態	已出版 - 1 5月 2009

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10.1016/j.physb.2008.12.011

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title = "Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes",

abstract = "Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown",

keywords = "Chemical conversion, Compound, Crystalline, X-ray diffraction",

author = "Cheng, {Kong Wei} and Huang, {Chao Ming} and Pan, {Guan Ting} and Chang, {Wen Sheng} and Lee, {Tai Chou} and Yang, {Thomas C.K.}",

note = "Funding Information: The authors are grateful to the National Science Council of the ROC (Grant no. NSC 95-2218-E-182-003-MY2) and to the Bureau of Energy, Ministry of Economic Affairs of the ROC (Grant no. 7455VH7200) for their support for this study.",

year = "2009",

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doi = "10.1016/j.physb.2008.12.011",

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TY - JOUR

T1 - Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

AU - Cheng, Kong Wei

AU - Huang, Chao Ming

AU - Pan, Guan Ting

AU - Chang, Wen Sheng

AU - Lee, Tai Chou

AU - Yang, Thomas C.K.

N1 - Funding Information: The authors are grateful to the National Science Council of the ROC (Grant no. NSC 95-2218-E-182-003-MY2) and to the Bureau of Energy, Ministry of Economic Affairs of the ROC (Grant no. 7455VH7200) for their support for this study.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown

AB - Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown

KW - Chemical conversion

KW - Compound

KW - Crystalline

KW - X-ray diffraction

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U2 - 10.1016/j.physb.2008.12.011

DO - 10.1016/j.physb.2008.12.011

M3 - 期刊論文

AN - SCOPUS:64149084538

SN - 0921-4526

VL - 404

SP - 1264

EP - 1270

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 8-11

ER -

Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

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Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn₅S₈ film electrodes