TY - JOUR
T1 - Power-constrained third-order active notch filter applied in IR-LNA for UWB standards
AU - Lin, Jui Yi
AU - Chiou, Hwann Kaeo
N1 - Funding Information:
The authors would like to thank the constant support from the Chip Implementation Center of the National Applied Research Laboratories.
PY - 2011/1
Y1 - 2011/1
N2 - This brief proposes a third-order active notch filter for an interferer-rejection (IR) ultrawideband low-noise amplifier (LNA) in a 0.18-μm complementary metal-oxide-semiconductor process. The design formulas are derived by considering the minimum power dissipation for the active notch filter that provides proper selections of the device size, the bias conditions, and the values of LC resonator. The active notch filter was then incorporated into a wideband common-gate LNA as an IR-LNA. The measurements show that the IR-LNA achieves a maximum gain of 14.7 dB, a minimum noise figure of 5.3 dB, an IR ratio of 35.7 dB, and an input third-order intercept point of -2.5 dBm at a 16-mW power dissipation, while the active notch filter rejects the interfering signal at 5.8 GHz. The chip area is 0.51 mm2, including testing pads.
AB - This brief proposes a third-order active notch filter for an interferer-rejection (IR) ultrawideband low-noise amplifier (LNA) in a 0.18-μm complementary metal-oxide-semiconductor process. The design formulas are derived by considering the minimum power dissipation for the active notch filter that provides proper selections of the device size, the bias conditions, and the values of LC resonator. The active notch filter was then incorporated into a wideband common-gate LNA as an IR-LNA. The measurements show that the IR-LNA achieves a maximum gain of 14.7 dB, a minimum noise figure of 5.3 dB, an IR ratio of 35.7 dB, and an input third-order intercept point of -2.5 dBm at a 16-mW power dissipation, while the active notch filter rejects the interfering signal at 5.8 GHz. The chip area is 0.51 mm2, including testing pads.
KW - Active notch filter
KW - complementary metal-oxide-semiconductor (CMOS)
KW - interferer rejection (IR)
KW - low-noise amplifier (LNA)
KW - ultrawideband (UWB)
UR - http://www.scopus.com/inward/record.url?scp=79251485290&partnerID=8YFLogxK
U2 - 10.1109/TCSII.2010.2092825
DO - 10.1109/TCSII.2010.2092825
M3 - 期刊論文
AN - SCOPUS:79251485290
SN - 1549-7747
VL - 58
SP - 11
EP - 15
JO - IEEE Transactions on Circuits and Systems II: Express Briefs
JF - IEEE Transactions on Circuits and Systems II: Express Briefs
IS - 1
M1 - 5685263
ER -