@inproceedings{e580963ae7c34a8594ab781aaa9b8965,
title = "Positioning and numbering Ge quantum dots for effective quantum tunneling devices",
abstract = "The authors have demonstrated a simple method to precisely control the number and the position of nanometerscaled Ge quantum dots (QDs) embedded in SiO2 or Si3N4 tunnel barriers via thermally oxidizing pre-patterned nanostructures. A single Ge QD in the core or twin Ge QDs near the edges of the nanotrench could be realized by modulating the initial nanostructure's dimensions and the spacer's materials. This method offers great promise to realize effective single electron transistors and coupled QD devices for single charge manipulations.",
keywords = "Component: quantum dots, Germanium, Single-electron devices",
author = "Chen, {K. H.} and Chien, {C. Y.} and Lai, {W. T.} and Lee, {S. W.} and Li, {P. W.}",
year = "2009",
language = "???core.languages.en_GB???",
isbn = "9789810836948",
series = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009",
pages = "536--539",
booktitle = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009",
note = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 ; Conference date: 26-07-2009 Through 30-07-2009",
}