In this paper, based on the Monte-Carlo ray tracing simulation we present the study of the light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer with several parameters, including chip dimensions, absorption coefficients and package. Besides, the light extraction efficient characteristic of a ThinGaN LED is studied.
|頁（從 - 到）||111-118|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已出版 - 2004|
|事件||Fourth International Conference on Solid State Lighting - Denver, CO, United States|
持續時間: 3 8月 2004 → 6 8月 2004