摘要
In this paper, based on the Monte-Carlo ray tracing simulation we present the study of the light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer with several parameters, including chip dimensions, absorption coefficients and package. Besides, the light extraction efficient characteristic of a ThinGaN LED is studied.
原文 | ???core.languages.en_GB??? |
---|---|
文章編號 | 14 |
頁(從 - 到) | 111-118 |
頁數 | 8 |
期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
卷 | 5530 |
DOIs | |
出版狀態 | 已出版 - 2004 |
事件 | Fourth International Conference on Solid State Lighting - Denver, CO, United States 持續時間: 3 8月 2004 → 6 8月 2004 |