Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

T. M. Hsu; C. Y. Lai; W. H. Chang; C. C. Pan; C. C. Chuo; J. I. Chyi

Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

T. M. Hsu, C. Y. Lai, W. H. Chang, C. C. Pan, C. C. Chuo, J. I. Chyi

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

The polarization field of barrier-doped In_0.06Ga _0.94N/Al_0.1In_0.02Ga_0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.

原文	???core.languages.en_GB???
頁（從 - 到）	545-547
頁數	3
期刊	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態	已出版 - 2004
事件	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan 持續時間: 31 5月 2004 → 4 6月 2004

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title = "Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells",

abstract = "The polarization field of barrier-doped In0.06Ga 0.94N/Al0.1In0.02Ga0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.",

author = "Hsu, {T. M.} and Lai, {C. Y.} and Chang, {W. H.} and Pan, {C. C.} and Chuo, {C. C.} and Chyi, {J. I.}",

year = "2004",

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pages = "545--547",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

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TY - JOUR

T1 - Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

AU - Hsu, T. M.

AU - Lai, C. Y.

AU - Chang, W. H.

AU - Pan, C. C.

AU - Chuo, C. C.

AU - Chyi, J. I.

PY - 2004

Y1 - 2004

N2 - The polarization field of barrier-doped In0.06Ga 0.94N/Al0.1In0.02Ga0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.

AB - The polarization field of barrier-doped In0.06Ga 0.94N/Al0.1In0.02Ga0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.

UR - http://www.scopus.com/inward/record.url?scp=23744480073&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:23744480073

SN - 1092-8669

SP - 545

EP - 547

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

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