@inproceedings{e4b2bfe841d04445a3b60a534c4ea27c,
title = "Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring",
abstract = "The growth of chlorinated hydrognated silicon (Si:H:C1) films on Si substrate from trichlorosilane (SiHCl3) using the plasma enhanced chemical vapour deposition system is investigated with optical emission spectroscopy (OES) endpoint detector. Surface profiler and Fourier transform infrared spectroscopy were used to measure the film properties-thickness and chemical bonds. The role of chlorine and hydrogen in crystal formation is discussed in terms of surface chemistry through film deposition. It showed that higher deposition rate (> 0.3nm/sec) could be achieved with increasing input power and the surface termination species depend on the RF power level and flow rate of a trichlorosilane (SiHCl3) and hydrogen (H2) mixture gas.",
author = "Lee, {Chien Chieh} and Wang, {Song Ho} and Chang, {Hsueh Er} and Fuh, {Yiin Kuen} and Li, {Tomi T.} and Chiou, {Ya Hui} and Cheng, {Hsin Chuan}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 China Semiconductor Technology International Conference, CSTIC 2019 ; Conference date: 18-03-2019 Through 19-03-2019",
year = "2019",
month = mar,
doi = "10.1109/CSTIC.2019.8755637",
language = "???core.languages.en_GB???",
series = "China Semiconductor Technology International Conference 2019, CSTIC 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Cor Claeys and Ru Huang and Hanming Wu and Qinghuang Lin and Steve Liang and Peilin Song and Zhen Guo and Kafai Lai and Ying Zhang and Xinping Qu and Hsiang-Lan Lung and Wenjian Yu",
booktitle = "China Semiconductor Technology International Conference 2019, CSTIC 2019",
}