@inproceedings{b1fcaa7f80294fb8942ee1d2e1ca2236,
title = "Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation",
abstract = "We demonstrate 10Gbit/sec planar InAlAs based separated-absorption- transport-charge-multiplication avalanche photodiodes with a large active diameter (∼50μm). By inserting InP transport layers, bandwidth- enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.",
author = "Shi, {J. W.} and Wu, {Z. Y.} and Kuo, {F. M.}",
year = "2010",
doi = "10.1109/PHOTONICS.2010.5698789",
language = "???core.languages.en_GB???",
isbn = "9781424453689",
series = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",
pages = "124--125",
booktitle = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",
note = "23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ; Conference date: 07-11-2010 Through 11-11-2010",
}