Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

J. W. Shi, Z. Y. Wu, F. M. Kuo

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

We demonstrate 10Gbit/sec planar InAlAs based separated-absorption- transport-charge-multiplication avalanche photodiodes with a large active diameter (∼50μm). By inserting InP transport layers, bandwidth- enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.

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主出版物標題2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
頁面124-125
頁數2
DOIs
出版狀態已出版 - 2010
事件23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
持續時間: 7 11月 201011 11月 2010

出版系列

名字2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

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???event.eventtypes.event.conference???23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
國家/地區United States
城市Denver, CO
期間7/11/1011/11/10

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