Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs

Keyphrases

• Gallium Arsenide 100%
• Annealing Temperature 100%
• Fermi Level 100%
• Low-temperature-grown GaAs 100%
• Photoreflectance 100%
• Si-doped 100%
• GaAs on Si 100%
• Annealing 66%
• Low Temperature 66%
• Passivated 33%
• Conduction Band 33%
• Capping Layer 33%
• Photovoltaic Effect 33%
• Doped Layers 33%
• Arsenic Precipitation 33%
• Built-in Electric Field 33%
• Temperature Cap 33%

Engineering

• Gallium Arsenide 100%
• Low-Temperature 100%
• Doped Gaas 100%
• Photoreflectance 100%
• Fermi Level 75%
• Annealing Temperature 50%
• Arsenic 25%
• Doped Layer 25%
• Cap Layer 25%
• Electric Field 25%
• Conduction Band 25%
• Photovoltaic Effect 25%