Photonic crystal cavity with double heterostructure in gan bulk

Yu Chieh Cheng; Dong Po Cai; Chii Chang Chen; Chia Hua Chan; Chien Chieh Lee; Ya Lun Tsai

doi:10.1109/JPHOT.2013.2280343

Photonic crystal cavity with double heterostructure in gan bulk

Yu Chieh Cheng, Dong Po Cai, Chii Chang Chen, Chia Hua Chan, Chien Chieh Lee, Ya Lun Tsai

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm². The Q-factor of the cavity is measured to be as high as 10⁴.

原文	???core.languages.en_GB???
文章編號	6588284
期刊	IEEE Photonics Journal
卷	5
發行號	5
DOIs	https://doi.org/10.1109/JPHOT.2013.2280343
出版狀態	已出版 - 2013

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10.1109/JPHOT.2013.2280343

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@article{dd68fb607da34206a0729d11bbc84905,

title = "Photonic crystal cavity with double heterostructure in gan bulk",

abstract = "In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm2. The Q-factor of the cavity is measured to be as high as 104.",

keywords = "GaN, Photonic Crystals, Q-factor, double heterostructure",

author = "Cheng, {Yu Chieh} and Cai, {Dong Po} and Chen, {Chii Chang} and Chan, {Chia Hua} and Lee, {Chien Chieh} and Tsai, {Ya Lun}",

year = "2013",

doi = "10.1109/JPHOT.2013.2280343",

language = "???core.languages.en_GB???",

volume = "5",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

number = "5",

}

TY - JOUR

T1 - Photonic crystal cavity with double heterostructure in gan bulk

AU - Cheng, Yu Chieh

AU - Cai, Dong Po

AU - Chen, Chii Chang

AU - Chan, Chia Hua

AU - Lee, Chien Chieh

AU - Tsai, Ya Lun

PY - 2013

Y1 - 2013

N2 - In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm2. The Q-factor of the cavity is measured to be as high as 104.

AB - In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm2. The Q-factor of the cavity is measured to be as high as 104.

KW - GaN

KW - Photonic Crystals

KW - Q-factor

KW - double heterostructure

UR - http://www.scopus.com/inward/record.url?scp=84884518959&partnerID=8YFLogxK

U2 - 10.1109/JPHOT.2013.2280343

DO - 10.1109/JPHOT.2013.2280343

M3 - 期刊論文

AN - SCOPUS:84884518959

SN - 1943-0655

VL - 5

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 5

M1 - 6588284

ER -

Photonic crystal cavity with double heterostructure in gan bulk

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