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Photon emission from avalanche breakdown in the collector junction of GaAs/AlGaAs heterojunction bipolar transistors
J. Chen, G. B. Gao, D. Huang,
J. I. Chyi
, M. S. Ünlü, H. Morkoç
前瞻科技研究中心
電機工程學系
光電科學研究中心
研究成果
:
雜誌貢獻
›
期刊論文
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同行評審
13
引文 斯高帕斯(Scopus)
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深入研究「Photon emission from avalanche breakdown in the collector junction of GaAs/AlGaAs heterojunction bipolar transistors」主題。共同形成了獨特的指紋。
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Keyphrases
Heterojunction Bipolar Transistors
100%
Photon Emission
100%
Avalanche Breakdown
100%
GaAs-AlGaAs
100%
Conduction Band
50%
High Energy
50%
Electron Impact Ionization
50%
Self-absorption
50%
Spectral Distribution
50%
Distribution Curve
50%
Reverse Current
50%
Energy Transition
50%
Direct Band Gap
50%
Single Heterojunction Bipolar Transistor
50%
Electron-hole Pair
50%
Band-edge Emission
50%
Threshold Energy
50%
Free Carriers
50%
Intensity-dependent
50%
Carrier Recombination
50%
Engineering
Gallium Arsenide
100%
Heterojunctions
100%
Bipolar Transistor
100%
Aluminium Gallium Arsenide
100%
Collector Junction
100%
Threshold Energy
50%
Spectral Distribution
50%
Distribution Curve
50%
Broad Peak
50%
Impact Ionization
50%
Hole Pair
50%
Energy Transition
50%
Excited Electron
50%
Band Edge
50%
Emit Light
50%
Conduction Band
50%
Earth and Planetary Sciences
Emissions
100%
Heterojunctions
100%
Bipolar Transistor
100%
Aluminum Gallium Arsenide
100%
Holes (Electron Deficiencies)
50%
Electron Impact
50%
Conduction Band
50%
Physics
Bipolar Transistor
100%
Heterojunctions
100%
Holes (Electron Deficiencies)
50%
Conduction Band
50%