Photodetectors with an HIT structure on p-type crystalline Si wafers

C. H. Lin; T. H. Tsai; C. M. Wang; W. T. Yeh

doi:10.1016/j.apsusc.2012.12.113

Photodetectors with an HIT structure on p-type crystalline Si wafers

C. H. Lin, T. H. Tsai, C. M. Wang, W. T. Yeh

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We have investigated the visible/near-infrared photodetectors based on the nipip HIT structure. The responsivities of the nipip photodetectors were compared with the pinin photodetectors. The nipip structure has a better near-infrared response; meanwhile the pinin structure has a better blue response. At 1 V, the responsivities of the typical nipip HIT structure could achieve 0.478, 0.530, and 0.667 A/W at the wavelengths of 450, 650, and 850 nm, respectively. The thicker top a-Si:H(i) would not prevent the hole collection for the nipip structures. If the thickness of top a-Si:H(i) can be appropriately increased, the responsivities would be further enhanced.

原文	???core.languages.en_GB???
頁（從 - 到）	269-272
頁數	4
期刊	Applied Surface Science
卷	275
DOIs	https://doi.org/10.1016/j.apsusc.2012.12.113
出版狀態	已出版 - 15 6月 2013

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10.1016/j.apsusc.2012.12.113

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title = "Photodetectors with an HIT structure on p-type crystalline Si wafers",

abstract = "We have investigated the visible/near-infrared photodetectors based on the nipip HIT structure. The responsivities of the nipip photodetectors were compared with the pinin photodetectors. The nipip structure has a better near-infrared response; meanwhile the pinin structure has a better blue response. At 1 V, the responsivities of the typical nipip HIT structure could achieve 0.478, 0.530, and 0.667 A/W at the wavelengths of 450, 650, and 850 nm, respectively. The thicker top a-Si:H(i) would not prevent the hole collection for the nipip structures. If the thickness of top a-Si:H(i) can be appropriately increased, the responsivities would be further enhanced.",

keywords = "HIT, Photodetectors, Solar cells",

author = "Lin, {C. H.} and Tsai, {T. H.} and Wang, {C. M.} and Yeh, {W. T.}",

note = "Funding Information: The author is grateful to the National Center for High-Performance Computing for computer time and facilities . This work is supported by National Science Council of R.O.C. under contract no. NSC 101-2221-E-259 -023 -MY3.",

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doi = "10.1016/j.apsusc.2012.12.113",

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T1 - Photodetectors with an HIT structure on p-type crystalline Si wafers

AU - Lin, C. H.

AU - Tsai, T. H.

AU - Wang, C. M.

AU - Yeh, W. T.

N1 - Funding Information: The author is grateful to the National Center for High-Performance Computing for computer time and facilities . This work is supported by National Science Council of R.O.C. under contract no. NSC 101-2221-E-259 -023 -MY3.

PY - 2013/6/15

Y1 - 2013/6/15

N2 - We have investigated the visible/near-infrared photodetectors based on the nipip HIT structure. The responsivities of the nipip photodetectors were compared with the pinin photodetectors. The nipip structure has a better near-infrared response; meanwhile the pinin structure has a better blue response. At 1 V, the responsivities of the typical nipip HIT structure could achieve 0.478, 0.530, and 0.667 A/W at the wavelengths of 450, 650, and 850 nm, respectively. The thicker top a-Si:H(i) would not prevent the hole collection for the nipip structures. If the thickness of top a-Si:H(i) can be appropriately increased, the responsivities would be further enhanced.

AB - We have investigated the visible/near-infrared photodetectors based on the nipip HIT structure. The responsivities of the nipip photodetectors were compared with the pinin photodetectors. The nipip structure has a better near-infrared response; meanwhile the pinin structure has a better blue response. At 1 V, the responsivities of the typical nipip HIT structure could achieve 0.478, 0.530, and 0.667 A/W at the wavelengths of 450, 650, and 850 nm, respectively. The thicker top a-Si:H(i) would not prevent the hole collection for the nipip structures. If the thickness of top a-Si:H(i) can be appropriately increased, the responsivities would be further enhanced.

KW - HIT

KW - Photodetectors

KW - Solar cells

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U2 - 10.1016/j.apsusc.2012.12.113

DO - 10.1016/j.apsusc.2012.12.113

M3 - 期刊論文

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SN - 0169-4332

VL - 275

SP - 269

EP - 272

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Photodetectors with an HIT structure on p-type crystalline Si wafers

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