Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

Jin-Wei Shi, C. C. Chen, C. K. Wang, C. S. Lin, J. K. Sheu, W. C. Lai, C. H. Kuo, C. J. Tun, Tsung-Hsun Yang, F. C. Tsao, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

17 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.

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頁(從 - 到)449-451
頁數3
期刊IEEE Photonics Technology Letters
20
發行號6
DOIs
出版狀態已出版 - 15 3月 2008

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