摘要
In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 449-451 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 20 |
發行號 | 6 |
DOIs | |
出版狀態 | 已出版 - 15 3月 2008 |