Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

J. W. Shi, C. C. Chen, C. K. Wang, C. S. Lin, J. K. Sheu, W. C. Lai, C. H. Kuo, C. J. Tun, T. H. Yang, F. C. Tsao, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

16 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.

原文???core.languages.en_GB???
頁(從 - 到)449-451
頁數3
期刊IEEE Photonics Technology Letters
20
發行號6
DOIs
出版狀態已出版 - 15 3月 2008

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