P/He ion implant isolation technology for AlGaN/GaN HFETs

G. Hanington; Y. M. Hsin; Q. Z. Liu; P. M. Asbeck; S. S. Lau; M. Asif Khan; J. W. Yang; Q. Chen

doi:10.1049/el:19980091

P/He ion implant isolation technology for AlGaN/GaN HFETs

G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. Asif Khan, J. W. Yang, Q. Chen

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

39 引文斯高帕斯（Scopus）

摘要

A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 10⁸Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

原文	???core.languages.en_GB???
頁（從 - 到）	193-195
頁數	3
期刊	Electronics Letters
卷	34
發行號	2
DOIs	https://doi.org/10.1049/el:19980091
出版狀態	已出版 - 22 1月 1998

存取文件

10.1049/el:19980091

引用此

@article{31169ca1142844e090a758f29f151980,

title = "P/He ion implant isolation technology for AlGaN/GaN HFETs",

abstract = "A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.",

author = "G. Hanington and Hsin, {Y. M.} and Liu, {Q. Z.} and Asbeck, {P. M.} and Lau, {S. S.} and {Asif Khan}, M. and Yang, {J. W.} and Q. Chen",

year = "1998",

month = jan,

day = "22",

doi = "10.1049/el:19980091",

language = "???core.languages.en_GB???",

volume = "34",

pages = "193--195",

journal = "Electronics Letters",

issn = "0013-5194",

number = "2",

}

TY - JOUR

T1 - P/He ion implant isolation technology for AlGaN/GaN HFETs

AU - Hanington, G.

AU - Hsin, Y. M.

AU - Liu, Q. Z.

AU - Asbeck, P. M.

AU - Lau, S. S.

AU - Asif Khan, M.

AU - Yang, J. W.

AU - Chen, Q.

PY - 1998/1/22

Y1 - 1998/1/22

N2 - A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

AB - A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0031652510&partnerID=8YFLogxK

U2 - 10.1049/el:19980091

DO - 10.1049/el:19980091

M3 - 期刊論文

AN - SCOPUS:0031652510

SN - 0013-5194

VL - 34

SP - 193

EP - 195

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

P/He ion implant isolation technology for AlGaN/GaN HFETs

摘要

存取文件

指紋

引用此