P/He ion implant isolation technology for AlGaN/GaN HFETs

G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. Asif Khan, J. W. Yang, Q. Chen

研究成果: 雜誌貢獻期刊論文同行評審

38 引文 斯高帕斯(Scopus)

摘要

A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

原文???core.languages.en_GB???
頁(從 - 到)193-195
頁數3
期刊Electronics Letters
34
發行號2
DOIs
出版狀態已出版 - 22 1月 1998

指紋

深入研究「P/He ion implant isolation technology for AlGaN/GaN HFETs」主題。共同形成了獨特的指紋。

引用此