Performance on test beam of the L3 double-sided silicon microstrip detector

A. Adam, O. Adriani, S. Ahlen, G. Ambrosi, E. Babucci, A. Baschirotto, R. Battiston, A. Bay, Gy L. Bencze, B. Bertucci, M. Biasini, G. M. Bilei, G. J. Bobbink, M. Bosetti, M. L. Brooks, J. Busenitz, W. J. Burger, C. Camps, M. Caria, G. CastelliniB. Checcucci, A. Chen, T. E. Coan, V. Commichau, D. DiBitonto, P. Duinker, S. Easo, P. Extermann, E. Fiandrini, A. Gougas, K. Hangarter, C. Hauviller, A. Herve, G. Hu, I. Josa, J. S. Kapustinski, D. Kim, W. W. Kinnison, V. R. Krastev, G. Landi, M. Lebeau, P. Lecomte, D. M. Lee, R. Leiste, W. T. Lin, W. Lohmann, A. Marin, R. Massetti, G. B. Mills, H. Nowak, G. Passaleva, T. Paul, M. Pauluzzi, S. Pensotti, E. Perrin, P. G. Rancoita, M. Rattaggi, A. Rosch, A. Santocchia, M. Sachwitz, P. Schmitz, B. Schöneich, L. Servoli, G. Susinno, G. Terzi, F. Tonisch, J. Toth, G. Trowitzsch, G. M. Viertel, H. Vogt, S. Waldmeier, J. Wegmann, R. Weill, S. C. Yeh, B. Zhou

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ≥ 16 and a detection efficiency ≥ 99% are measured for both sides.

原文???core.languages.en_GB???
頁(從 - 到)436-439
頁數4
期刊Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
348
發行號2-3
DOIs
出版狀態已出版 - 1 9月 1994

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