Performance of an E-mode AlGaN/GaN High-Electron-Mobility Transistor Integrated with a Current Limiting Diode

Keyphrases

• Enhancement-mode (E-mode) 100%
• AlGaN-GaN 100%
• GaN HEMT 100%
• Diode 100%
• Current Limiting 100%
• Si Substrate 16%
• Breakdown Voltage 16%
• Gate Voltage Swing 16%
• New Configuration 16%
• P-GaN Gate 16%
• Reverse Conduction 16%
• Gate Reliability 16%

Engineering

• Process Step 100%
• Si Substrate 100%
• Breakdown Voltage 100%
• Gate Voltage 100%