Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

Cheng Chung Chu; Yi Jen Chan; Rong Heng Yuang; Jen Inn Chyi; Ching Ting Lee

doi:10.1049/el:19951131

Performance enhancement using WSi_x/ITO electrodes in InGaAs/InAlAs MSM photo detectors

Cheng Chung Chu, Yi Jen Chan, Rong Heng Yuang, Jen Inn Chyi, Ching Ting Lee

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A thin (200Å) WSi_N film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

原文	???core.languages.en_GB???
頁（從 - 到）	1692-1694
頁數	3
期刊	Electronics Letters
卷	31
發行號	19
DOIs	https://doi.org/10.1049/el:19951131
出版狀態	已出版 - 14 9月 1995

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10.1049/el:19951131

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@article{ead5ec54232e49f888f21f7bcef022f5,

title = "Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors",

abstract = "A thin (200{\AA}) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.",

keywords = "Gallium indium arsenide, Metal-semiconductor-metal structures, Photodetectors",

author = "Chu, {Cheng Chung} and Chan, {Yi Jen} and Yuang, {Rong Heng} and Chyi, {Jen Inn} and Lee, {Ching Ting}",

year = "1995",

month = sep,

day = "14",

doi = "10.1049/el:19951131",

language = "???core.languages.en_GB???",

volume = "31",

pages = "1692--1694",

journal = "Electronics Letters",

issn = "0013-5194",

number = "19",

}

TY - JOUR

T1 - Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

AU - Chu, Cheng Chung

AU - Chan, Yi Jen

AU - Yuang, Rong Heng

AU - Chyi, Jen Inn

AU - Lee, Ching Ting

PY - 1995/9/14

Y1 - 1995/9/14

N2 - A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

AB - A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

KW - Gallium indium arsenide

KW - Metal-semiconductor-metal structures

KW - Photodetectors

UR - http://www.scopus.com/inward/record.url?scp=0029375080&partnerID=8YFLogxK

U2 - 10.1049/el:19951131

DO - 10.1049/el:19951131

M3 - 期刊論文

AN - SCOPUS:0029375080

VL - 31

SP - 1692

EP - 1694

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 19

ER -

Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

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Performance enhancement using WSi_x/ITO electrodes in InGaAs/InAlAs MSM photo detectors