Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

Cheng Chung Chu, Yi Jen Chan, Rong Heng Yuang, Jen Inn Chyi, Ching Ting Lee

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

原文???core.languages.en_GB???
頁(從 - 到)1692-1694
頁數3
期刊Electronics Letters
31
發行號19
DOIs
出版狀態已出版 - 14 9月 1995

指紋

深入研究「Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors」主題。共同形成了獨特的指紋。

引用此