摘要
A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1692-1694 |
頁數 | 3 |
期刊 | Electronics Letters |
卷 | 31 |
發行號 | 19 |
DOIs | |
出版狀態 | 已出版 - 14 9月 1995 |