Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

Wen Kai Wang; Po Chen Lin; Ching Huao Lin; Cheng Kuo Lin; Yi Jen Chan; Guan Ting Chen; Jen Inn Chyi

doi:10.1109/LED.2004.840395

Performance enhancement by using the n⁺-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

Wen Kai Wang, Po Chen Lin, Ching Huao Lin, Cheng Kuo Lin, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

38 引文斯高帕斯（Scopus）

摘要

Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN-GaN HEMT as a cap layer, the RF performance of this device will be limited by its high contact resistance and high knee voltage. In this letter, we propose using the n⁺-GaN cap layer and the selective gate recess etching technology on the AlGaN-GaN HEMTs fabrication. With this n ⁺-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance is reduced from 1.0 to 0.4 Ω · mm. The 0.3 μm gate-length device demonstrates an I_ds,max of 1.1 A/mm, a gm_,max of 220 mS/mm, an f_T of 43 GHz, an f_max of 68 GHz, and an output power density of 4 W/mm at 2.4 GHz.

原文	???core.languages.en_GB???
頁（從 - 到）	5-7
頁數	3
期刊	IEEE Electron Device Letters
卷	26
發行號	1
DOIs	https://doi.org/10.1109/LED.2004.840395
出版狀態	已出版 - 1月 2005

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10.1109/LED.2004.840395

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@article{b444230f194044a09a7456a6b81212d2,

title = "Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication",

abstract = "Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN-GaN HEMT as a cap layer, the RF performance of this device will be limited by its high contact resistance and high knee voltage. In this letter, we propose using the n+-GaN cap layer and the selective gate recess etching technology on the AlGaN-GaN HEMTs fabrication. With this n +-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance is reduced from 1.0 to 0.4 Ω · mm. The 0.3 μm gate-length device demonstrates an Ids,max of 1.1 A/mm, a gm,max of 220 mS/mm, an fT of 43 GHz, an fmax of 68 GHz, and an output power density of 4 W/mm at 2.4 GHz.",

keywords = "AlGaN-GaN HEMTs, Reactive ion etching (RIE) recess etching, n-GaN cap layer",

author = "Wang, {Wen Kai} and Lin, {Po Chen} and Lin, {Ching Huao} and Lin, {Cheng Kuo} and Chan, {Yi Jen} and Chen, {Guan Ting} and Chyi, {Jen Inn}",

note = "Funding Information: Manuscript received July 29, 2004; revised October 27, 2004. This work was supported by the Ministry of Education under Contract 91-E-FA06-1-4, and by the Ministry of Economic Affairs under Contract 91-EC-2-A-17-0285-029. The review of this letter was arranged by T. Mizutani. The authors are with the Department of Electrical Engineering, National Central University, Chungli 32054 Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2004.840395 Fig. 1. Device cross-sectional structures of the recessed and conventional AlGaN–GaN HEMTs.",

year = "2005",

month = jan,

doi = "10.1109/LED.2004.840395",

language = "???core.languages.en_GB???",

volume = "26",

pages = "5--7",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "1",

}

TY - JOUR

T1 - Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

AU - Wang, Wen Kai

AU - Lin, Po Chen

AU - Lin, Ching Huao

AU - Lin, Cheng Kuo

AU - Chan, Yi Jen

AU - Chen, Guan Ting

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received July 29, 2004; revised October 27, 2004. This work was supported by the Ministry of Education under Contract 91-E-FA06-1-4, and by the Ministry of Economic Affairs under Contract 91-EC-2-A-17-0285-029. The review of this letter was arranged by T. Mizutani. The authors are with the Department of Electrical Engineering, National Central University, Chungli 32054 Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2004.840395 Fig. 1. Device cross-sectional structures of the recessed and conventional AlGaN–GaN HEMTs.

PY - 2005/1

Y1 - 2005/1

N2 - Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN-GaN HEMT as a cap layer, the RF performance of this device will be limited by its high contact resistance and high knee voltage. In this letter, we propose using the n+-GaN cap layer and the selective gate recess etching technology on the AlGaN-GaN HEMTs fabrication. With this n +-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance is reduced from 1.0 to 0.4 Ω · mm. The 0.3 μm gate-length device demonstrates an Ids,max of 1.1 A/mm, a gm,max of 220 mS/mm, an fT of 43 GHz, an fmax of 68 GHz, and an output power density of 4 W/mm at 2.4 GHz.

AB - Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN-GaN HEMT as a cap layer, the RF performance of this device will be limited by its high contact resistance and high knee voltage. In this letter, we propose using the n+-GaN cap layer and the selective gate recess etching technology on the AlGaN-GaN HEMTs fabrication. With this n +-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance is reduced from 1.0 to 0.4 Ω · mm. The 0.3 μm gate-length device demonstrates an Ids,max of 1.1 A/mm, a gm,max of 220 mS/mm, an fT of 43 GHz, an fmax of 68 GHz, and an output power density of 4 W/mm at 2.4 GHz.

KW - AlGaN-GaN HEMTs

KW - Reactive ion etching (RIE) recess etching

KW - n-GaN cap layer

UR - http://www.scopus.com/inward/record.url?scp=12444283799&partnerID=8YFLogxK

U2 - 10.1109/LED.2004.840395

DO - 10.1109/LED.2004.840395

M3 - 期刊論文

AN - SCOPUS:12444283799

SN - 0741-3106

VL - 26

SP - 5

EP - 7

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

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Performance enhancement by using the n⁺-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication