Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication

Wen Kai Wang, Po Chen Lin, Ching Huao Lin, Cheng Kuo Lin, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

研究成果: 雜誌貢獻會議論文同行評審

摘要

Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN/GaN HEMT as a cap layer, the dc and rf performances of the device will be limited by its disadvantages of high ohmic contact resistance and high knee voltage. In this study, we proposed by using the n+-GaN cap layer and the selective gate recess etching technology for the AlGaN/GaN HEMTs fabrication. With this n+-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance can be reduced from 1.0 Ω-mm to 0.4 Ω-mm. The recessed device demonstrated an I ds,max of 1.03 A/mm, a gm, max of 220 mS/mm, an f T of 26 GHz, an fmax of 50 GHz, and an output power density of 2.6 W/mm at 2.4 GHz.

原文???core.languages.en_GB???
頁(從 - 到)267-270
頁數4
期刊Institute of Physics Conference Series
184
出版狀態已出版 - 2005
事件31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
持續時間: 12 9月 200416 12月 2004

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