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Performance comparison of lattice-matched alinn/gan/algan/gan double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array
Hsin Ying Lee, Ying Hao Ju,
Jen Inn Chyi
, Ching Ting Lee
前瞻科技研究中心
電機工程學系
光電科學研究中心
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
4
引文 斯高帕斯(Scopus)
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深入研究「Performance comparison of lattice-matched alinn/gan/algan/gan double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array」主題。共同形成了獨特的指紋。
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Keyphrases
High Electron Mobility Transistor
100%
Performance Comparison
100%
Array of Channels
100%
Aluminum Gallium Nitride (AlGaN)
100%
Planar Channel
100%
Lattice Matching
100%
Double-channel
100%
Finned Channel
100%
Transconductance
50%
Double Hump
50%
Cut-off Frequency
25%
Metal-organic Chemical Vapor Deposition (MOCVD)
25%
Silicon Substrate
25%
Electron Mobility
25%
Oxide Layer
25%
Maximum Oscillation Frequency
25%
Depositional System
25%
GaN Epitaxial Layers
25%
Gate Oxide
25%
Control Capability
25%
Extrinsic Transconductance
25%
Vapor Cooling Condensation System
25%
Gate Control
25%
Sheet Electron Density
25%
Ga2O3 Films
25%
Engineering
Cutoff Frequency
100%
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Silicon Substrate
100%
Oxide Layer
100%
Control Gate
100%
Channel Device
100%
Deposition System
100%
Gate Oxide
100%
Condensation System
100%
Carrier Concentration
100%
Epitaxial Film
100%
Material Science
Transistor
100%
Electron Mobility
100%
Oxide Compound
25%
Silicon
25%
Film
25%
Chemical Vapor Deposition
25%
Carrier Concentration
25%
Epitaxial Film
25%
Earth and Planetary Sciences
High Electron Mobility Transistors
100%
Transconductance
100%
Electron Density
33%
Metalorganic Chemical Vapor Deposition
33%
Electron Mobility
33%
Physics
High Electron Mobility Transistors
100%
Electron Density
33%
Condensation
33%
Electron Mobility
33%
Metalorganic Chemical Vapor Deposition
33%