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Performance comparison of lattice-matched alinn/gan/algan/gan double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array
Hsin Ying Lee, Ying Hao Ju,
Jen Inn Chyi
, Ching Ting Lee
前瞻科技研究中心
電機工程學系
光電科學研究中心
研究成果
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雜誌貢獻
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期刊論文
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深入研究「Performance comparison of lattice-matched alinn/gan/algan/gan double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array」主題。共同形成了獨特的指紋。
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Engineering & Materials Science
Transconductance
77%
High electron mobility transistors
75%
Metallorganic chemical vapor deposition
34%
Electron mobility
33%
Epitaxial films
32%
Carrier concentration
30%
Thick films
26%
Cutoff frequency
25%
Electric potential
22%
Condensation
21%
Deposits
21%
Vapors
19%
Oxides
18%
Silicon
17%
Fabrication
16%
Substrates
15%
Cooling
14%
Physics & Astronomy
fins
77%
mesas
74%
high electron mobility transistors
67%
performance
28%
transconductance
26%
electric potential
8%
electron mobility
8%
metalorganic chemical vapor deposition
7%
thick films
7%
deposits
7%
condensation
7%
cut-off
6%
vapors
6%
cooling
5%
oscillations
5%
oxides
5%
Chemical Compounds
Transconductance
100%
Compound Mobility
49%
Voltage
31%
Epitaxial Film
30%
Electron Mobility
25%
Electron Density
19%
Chemical Vapour Deposition
19%
Cooling
19%
Condensation
15%
Oxide
11%
Liquid Film
10%