摘要
Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.
| 原文 | ???core.languages.en_GB??? |
|---|---|
| 頁(從 - 到) | 3283-3286 |
| 頁數 | 4 |
| 期刊 | Physical Review B - Condensed Matter and Materials Physics |
| 卷 | 59 |
| 發行號 | 5 |
| DOIs | |
| 出版狀態 | 已出版 - 1999 |