Pattern of x-ray scattering by thermal phonons in si

Z. Wu; Hawoong Hong; R. Aburano; P. Zschack; P. Jemian; J. Tischler; Haydn Chen; D. A. Luh; T. C. Chiang

doi:10.1103/PhysRevB.59.3283

Pattern of x-ray scattering by thermal phonons in si

Z. Wu, Hawoong Hong, R. Aburano, P. Zschack, P. Jemian, J. Tischler, Haydn Chen, D. A. Luh, T. C. Chiang

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

22 引文斯高帕斯（Scopus）

摘要

Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.

原文	???core.languages.en_GB???
頁（從 - 到）	3283-3286
頁數	4
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	59
發行號	5
DOIs	https://doi.org/10.1103/PhysRevB.59.3283
出版狀態	已出版 - 1999

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10.1103/PhysRevB.59.3283

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AU - Hong, Hawoong

AU - Aburano, R.

AU - Zschack, P.

AU - Jemian, P.

AU - Tischler, J.

AU - Chen, Haydn

AU - Luh, D. A.

AU - Chiang, T. C.

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AB - Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.

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Pattern of x-ray scattering by thermal phonons in si

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