Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres

Mai Chih Liu; Chang Rong Lin; Chia Hua Chan

doi:10.1063/1.4967508

Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres

Mai Chih Liu, Chang Rong Lin, Chia Hua Chan

能源工程研究所

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of the components and elevates the light extraction efficiency of FC LED. At a constant current of 400 mA, the output power of the FC LED with 1200 nm conical structures is 638.1 mW and enhanced by 6.1% compared with the FC LED without surface roughening.

原文	???core.languages.en_GB???
文章編號	115013
期刊	AIP Advances
卷	6
發行號	11
DOIs	https://doi.org/10.1063/1.4967508
出版狀態	已出版 - 1 11月 2016

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10.1063/1.4967508

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Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres

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