@article{18d847eefe674092b4460930f5bc530a,
title = "Origin of hot carriers in InGaN-based quantum-well solar cells",
abstract = "InxGa1-xN/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (.) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase inη.",
keywords = "Electron carriers, gallium compounds, quantum wells (QWs), solar cells",
author = "Lai, {K. Y.} and Lin, {G. J.} and Chen, {C. Y.} and Lai, {Y. L.} and He, {J. H.}",
note = "Funding Information: Manuscript received September 29, 2010; revised November 2, 2010; accepted November 2, 2010. Date of publication December 17, 2010; date of current version January 26, 2011. This work was supported by Taiwan National Science Council under Grant NSC 99-2112-M-002-024-MY3. The review of this letter was arranged by Editor C. Jagadish. K. Y. Lai, G. J. Lin, C.-Y. Chen, and J. H. He are with the Institute of Photonics and Optoelectronics at National Taiwan University, Taipei 10617, Taiwan (e-mail:
[email protected]). Y.-L. Lai is with Genesis Photonics Inc., Tainan Hsien 74144, Taiwan. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2091619",
year = "2011",
month = feb,
doi = "10.1109/LED.2010.2091619",
language = "???core.languages.en_GB???",
volume = "32",
pages = "179--181",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "2",
}