每年專案
摘要
An organic/inorganic white-light emitting F8T2 (9,9-dioctylfluorene-co-bithiophene)/GaN heterojunction is reported. The white-light emission is produced by hybridizing the blue light (464 nm) emitted from the GaN MQWs and the yellow/green light (500–650 nm) emitted at the F8T2/p-GaN interface by electroluminescence (EL). The yellow/green light emission in the F8T2 layer is resulted from the carrier accumulation and Frenkel excitons at the F8T2/p-GaN junction interface. It is concluded that the energy barrier and large mobility discrepancy at the F8T2/p-GaN junction interface cause carriers accumulating in the F8T2 side near the F8T2/p-GaN interface. The accumulated carriers at the F8T2/p-GaN interface form Frenkel excitons by Coulombic interaction. Then, the Frenkel excitons recombine to radiate the yellow/green emission in the F8T2 layer. The International Commission on Illumination (CIE) coordinate of the white-light emitted from the present device is at (0.28, 0.30), which is very close to the standard white light (0.33, 0.33).
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 64-68 |
頁數 | 5 |
期刊 | Organic Electronics |
卷 | 49 |
DOIs | |
出版狀態 | 已出版 - 10月 2017 |
指紋
深入研究「Organic/inorganic F8T2/GaN light emitting heterojunction」主題。共同形成了獨特的指紋。專案
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探討在不同微結構銅中鈀原子之擴散行為並藉此發展低溫銅鈀固態擴散鍵合應用於氮化鎵發光二極體封裝製程(2/3)
Liu, C.-Y. (PI)
1/08/17 → 31/07/18
研究計畫: Research
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