Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Keyphrases

• Active Layer 100%
• 850 Nm VCSEL 100%
• Quantum Well 100%
• Confining Layer 100%
• InGaAlAs 100%
• Oxide Confinement 100%
• Vertical-cavity Surface-emitting Laser (VCSEL) 60%
• Compressive Strain 40%
• Laser Performance 40%
• Numerical Calculation 20%
• Threshold Current 20%
• Active Regions 20%
• Current Distribution 20%
• Output Current 20%
• Maximum Output Power 20%
• Oxide Layer 20%
• Layer Design 20%
• Spectra Properties 20%
• AlGaAs 20%
• Aperture Size 20%
• Valence Band Structure 20%
• Optical Gain Spectra 20%
• Threshold Property 20%
• Gain Threshold 20%

Engineering

• Active Layer 100%
• Quantum Well 100%
• Compressive Strain 40%
• Laser Performance 40%
• Simulation Result 20%
• Numerical Calculation 20%
• Cavity Surface 20%
• Emitting Laser 20%
• Current Threshold 20%
• Current Distribution 20%
• Band Structure 20%
• Maximum Output Power 20%
• Oxide Layer 20%
• Layer Design 20%
• Valence Band 20%
• Main Reason 20%
• Aluminium Gallium Arsenide 20%
• Gain Spectrum 20%
• Optical Gain 20%
• Active Region 20%
• Aperture Size 20%

Physics

• Quantum Wells 100%
• Surface Emitting Laser 20%
• Current Distribution 20%