Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Yen Kuang Kuo, Jun Rong Chen, Ming Yung Jow, Cheng Zu Wu, Bao Jen Pong, Chii Chang Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

Vertical-cavity surface-emitting lasers with variant compressively strained InGaAlAs quantum wells have been investigated. The valence band structures, optical gain spectra, and threshold properties of InGaAlAs/AlGaAs quantum wells are compared and analyzed. The simulation results indicate that the characteristics of InGaAlAs quantum wells can be improved by increasing the amount of compressive strain in quantum well. Furthermore, the properties of VCSELs with these compressively strained InGaAlAs quantum welk are studied numerically. The results of numerical calculations show that the threshold current and maximum output power can be enhanced by using higher compressively strained InGaAlAs quantum well. However, when the compressive strain is larger than about 1.5%, further improvement of the laser performance becomes minimal. The effects of the position and aperture size of the oxide-confinement layers on the laser performance are also investigated. Variation of the oxide layer design is shown to affect the current distribution which makes the temperature in the active region different. It is the main reason for the power roll-off in the VCSEL devices.

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主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
DOIs
出版狀態已出版 - 2006
事件Vertical-Cavity Surface-Emitting Lasers X - San Jose, CA, United States
持續時間: 25 1月 200626 1月 2006

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6132
ISSN(列印)0277-786X

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???event.eventtypes.event.conference???Vertical-Cavity Surface-Emitting Lasers X
國家/地區United States
城市San Jose, CA
期間25/01/0626/01/06

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