Photoluminescence (PL) measurement and optical pumping at 25 K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction-band discontinuities to valence-band discontinuities of InGaN/GaN QW, ΔEC:ΔEV = 38:62, can be obtained.
|頁（從 - 到）||28-34|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已出版 - 2000|
|事件||Optoelectronic Materials and Devices II - Taipei, Taiwan|
持續時間: 26 7月 2000 → 28 7月 2000