Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

Wei Sheng Liu; Jen Inn Chyi

Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

電機工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.

原文	???core.languages.en_GB???
頁（從 - 到）	272-275
頁數	4
期刊	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態	已出版 - 2004
事件	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan 持續時間: 31 5月 2004 → 4 6月 2004

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title = "Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix",

abstract = "The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.",

author = "Liu, {Wei Sheng} and Chyi, {Jen Inn}",

year = "2004",

language = "???core.languages.en_GB???",

pages = "272--275",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

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TY - JOUR

T1 - Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

AU - Liu, Wei Sheng

AU - Chyi, Jen Inn

PY - 2004

Y1 - 2004

N2 - The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.

AB - The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.

UR - http://www.scopus.com/inward/record.url?scp=23744511381&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:23744511381

SN - 1092-8669

SP - 272

EP - 275

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

摘要

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