We have presented our study on optical models for simulating the light distribution of an LED and for calculating light extraction efficiency of an LED chip. In the former, we have precisely predicted the light distribution of an LED by a lens. In the latter, we has proposed to introduce a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 73% in light extraction efficiency.
|頁（從 - 到）||100-106|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已出版 - 2004|
|事件||Third International Conference on Solid State Lighting - San Diego, CA, United States|
持續時間: 5 8月 2003 → 7 8月 2003