Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

Shih Wei Feng; Yen Sheng Lin; Chi Chih Liao; Kung Jeng Ma; C. C. Yang; Chang Cheng Chou; Chia Ming Lee; Jen Inn Chyi

Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

Shih Wei Feng, Yen Sheng Lin, Chi Chih Liao, Kung Jeng Ma, C. C. Yang, Chang Cheng Chou, Chia Ming Lee, Jen Inn Chyi

電機工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.

原文	???core.languages.en_GB???
頁面	11
頁數	1
出版狀態	已出版 - 2000
事件	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France 持續時間: 10 9月 2000 → 15 9月 2000

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
城市	Nice, France
期間	10/09/00 → 15/09/00

引用此

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title = "Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures",

abstract = "Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.",

author = "Feng, {Shih Wei} and Lin, {Yen Sheng} and Liao, {Chi Chih} and Ma, {Kung Jeng} and Yang, {C. C.} and Chou, {Chang Cheng} and Lee, {Chia Ming} and Chyi, {Jen Inn}",

year = "2000",

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pages = "11",

note = "2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) ; Conference date: 10-09-2000 Through 15-09-2000",

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TY - CONF

T1 - Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

AU - Feng, Shih Wei

AU - Lin, Yen Sheng

AU - Liao, Chi Chih

AU - Ma, Kung Jeng

AU - Yang, C. C.

AU - Chou, Chang Cheng

AU - Lee, Chia Ming

AU - Chyi, Jen Inn

PY - 2000

Y1 - 2000

N2 - Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.

AB - Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.

UR - http://www.scopus.com/inward/record.url?scp=0033715811&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0033715811

SP - 11

T2 - 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Optical and material studies of indium compositional fluctuations in InGaN/GaN quantum well structures

摘要

???event.eventtypes.event.conference???

指紋

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