Indium compositional fluctuations in InGaN are important for efficient light emission. Quantum-dot-like InGaN aggregations trapped carriers for radiative recombination before they were trapped by defects for non-radiative recombination. This explains the efficient light emission in a compound of high defect density. In material analyses, clear indium aggregation and phase separation structures were observed.
|出版狀態||已出版 - 2000|
|事件||2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France|
持續時間: 10 9月 2000 → 15 9月 2000
|???event.eventtypes.event.conference???||2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)|
|期間||10/09/00 → 15/09/00|