Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy

Engineering

• Band Gap 100%
• Absorptivity 100%
• Absorption Coefficient 100%
• Thin Films 50%
• Gaas Substrate 50%
• Sapphire Substrate 50%
• Photon Energy 50%
• Oxygen Content 50%
• Activation Energy 50%
• Dopants 50%
• Photovoltaics 50%
• Electron Concentration 50%
• Gap Function 50%

Keyphrases

• Optical Properties 100%
• Electrical Properties 100%
• Plasma-assisted Molecular Beam Epitaxy 100%
• ZnSeO 100%
• Absorption Coefficient 33%
• Temperature Effect 16%
• GaAs Substrate 16%
• Sapphire Substrate 16%
• Photon Energy 16%
• Activation Energy 16%
• Oxygen Content 16%
• Band Gap 16%
• Hall Measurement 16%
• Dopant 16%
• Photovoltaic Devices 16%
• Transmittance Measurement 16%
• Electron Concentration 16%
• Bowing Parameter 16%
• Direct Band Gap 16%
• Cl Doping 16%
• Square Law 16%
• Gap Function 16%

Material Science

• Optical Property 100%
• Molecular Beam Epitaxy 100%
• Thin Films 50%
• Film 50%
• Activation Energy 50%
• Sapphire 50%
• Gallium Arsenide 50%
• Photovoltaics 50%
• Doping (Additives) 50%