摘要
ZnSeO alloys with O composition to 11.5% were grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The absorption coefficients, α(hω), determined from the transmittance measurements are higher than 1 × 104cm-1 for these ZnSeO thin films and manifest themselves very suitable for photovoltaic devices. The absorption coefficient following the square law of photon energy indicated that the ZnSeO has a direct band gap. Based on the quadratic band gap function, a bowing parameter of 6.9 eV was obtained. Cl doping in ZnSeO films grown on GaAs substrates were first demonstrated with carrier electron concentration varying from 1.2 × 1017cm-3 to 5.4 × 10 18cm-3 with 2.2% oxygen content. The activation energy of 123 meV for Cl dopant in ZnSeO was also deduced from temperature dependent Hall measurements.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 180-183 |
頁數 | 4 |
期刊 | Journal of Crystal Growth |
卷 | 378 |
DOIs | |
出版狀態 | 已出版 - 2013 |