Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy

Cheng Yu Chen, Cheng Yu Yang, Jen Inn Chyi, Chih Hung Wu

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

ZnSeO alloys with O composition to 11.5% were grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The absorption coefficients, α(hω), determined from the transmittance measurements are higher than 1 × 104cm-1 for these ZnSeO thin films and manifest themselves very suitable for photovoltaic devices. The absorption coefficient following the square law of photon energy indicated that the ZnSeO has a direct band gap. Based on the quadratic band gap function, a bowing parameter of 6.9 eV was obtained. Cl doping in ZnSeO films grown on GaAs substrates were first demonstrated with carrier electron concentration varying from 1.2 × 1017cm-3 to 5.4 × 10 18cm-3 with 2.2% oxygen content. The activation energy of 123 meV for Cl dopant in ZnSeO was also deduced from temperature dependent Hall measurements.

原文???core.languages.en_GB???
頁(從 - 到)180-183
頁數4
期刊Journal of Crystal Growth
378
DOIs
出版狀態已出版 - 2013

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